050-5840 rev a 2 -200 6 maximum ratings all ratings: t c = 25c unless otherwise specified. power mos v ? is a new generation of high voltage n-channel enhancement mode power mosfets. this new technology minimizes the jfet effect,increases packing density and reduces the on-resistance. power mos v ? also achieves faster switching speeds through optimized gate layout. faster switching avalanche energy rated lower leakage popular t-max? or to-264 package caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. apt website - http://www.advancedpower.com characteristic / test conditionsdrain-source breakdown voltage (v gs = 0v, i d = 250a) drain-source on-state resistance 2 (v gs = 10v, i d = 8a) zero gate voltage drain current (v ds = 1200, v gs = 0v) zero gate voltage drain current (v ds = 960v, v gs = 0v, t c = 125c) gate-source leakage current (v gs = 30v, v ds = 0v) gate threshold voltage (v ds = v gs , i d = 2.5 ma) symbol v dss i d i dm v gs v gsm p d t j ,t stg t l i ar e ar e as parameterdrain-source voltage continuous drain current @ t c = 25c pulsed drain current 1 gate-source voltage continuousgate-source voltage transient total power dissipation @ t c = 25c linear derating factoroperating and storage junction temperature range lead temperature: 0.063" from case for 10 sec. avalanche current 1 (repetitive and non-repetitive) repetitive avalanche energy 1 single pulse avalanche energy 4 unit volts amps volts watts w/c c amps mj static electrical characteristics symbol bv dss r ds(on) i dss i gss v gs(th) unit volts ohms ana volts min typ max 1200 0.800 250 1000100 24 apt12080b2vfr_lvfr 1200 1664 3040 520 4.16 -55 to 150 300 1650 2500 fredfet power mos v ? fredfet g d s apt12080b2vfr apt12080lvfr 1200v 16a 0.800 ?? ?? ? t-max ? to-264 downloaded from: http:///
dynamic characteristics apt12080b2vfr_lvfr z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 10 rectangular pulse duration (seconds) figure 1, maximum effective transient thermal impedance, junction-to-case vs pulse duration 0.30.1 0.050.01 0.0050.001 note: duty factor d = t 1 / t 2 peak t j = p dm x z jc + t c t 1 t 2 p dm 0.1 single pulse 0.02 0.05 0.2 d=0.5 0.01 050-5840 rev a 2-200 6 1 repetitive rating: pulse width limited by maximum junction 3 see mil-std-750 method 3471 temperature. 4 starting t j = +25c, l = 19.53mh, r g = 25 ? , peak i l = 16a 2 pulse test: pulse width < 380 s, duty cycle < 2% 5 i s i d [cont.], di / dt = 100a/s, t j 150c, r g = 2.0 ? v r = 200v. apt reserves the right to change, without notice, the specifications and information contained herein. source-drain diode ratings and characteristics characteristic / test conditionscontinuous source current (body diode) pulsed source current 1 (body diode) diode forward voltage 2 (v gs = 0v, i s = -i d [cont.]) peak diode recovery dv / dt 5 reverse recovery time(i s = -i d [cont.], di / dt = 100a/s) reverse recovery charge(i s = -i d [cont.], di / dt = 100a/s) peak recovery current(i s = -i d [cont.], di / dt = 100a/s) symbol i s i sm v sd dv / dt t rr q rr i rrm unit amps volts v/ns ns c amps symbol c iss c oss c rss q g q gs q gd t d (on) t r t d (off) t f characteristicinput capacitance output capacitance reverse transfer capacitance total gate charge 3 gate-source charge gate-drain ("miller") charge turn-on delay time rise time turn-off delay time fall time test conditions v gs = 0v v ds = 25v f = 1 mhz v gs = 10v v dd = 0.5 v dss i d = i d [cont.] @ 25c v gs = 15v v dd = 0.5 v dss i d = i d [cont.] @ 25c r g = 0.6 ? unit pf nc ns min typ max 1664 1.3 18 t j = 25c 350 t j = 125c 700 t j = 25c 2 t j = 125c 6 t j = 25c 12 t j = 125c 22 thermal characteristics symbol r jc r ja min typ max 0.24 40 unitc/w characteristicjunction to case junction to ambient min typ max 6500 7800 530 740 250 375 325 485 29 45 145 215 16 32 12 24 59 90 12 24 downloaded from: http:///
v ds , drain-to-source voltage (volts) v ds , drain-to-source voltage (volts) figure 2, typical output characteristics figure 3, typical output characteristics v gs , gate-to-source voltage (volts) i d , drain current (amperes) figure 4, typical transfer characteristics figure 5, r ds (on) vs drain current t c , case temperature (c) t j , junction temperature (c) figure 6, maximum drain current vs case temperature figure 7, breakdown voltage vs temperature t j , junction temperature (c) t c , case temperature (c) figure 8, on-resistance vs. temperature figure 9, threshold voltage vs temperature r ds (on), drain-to-source on resistance i d , drain current (amperes) i d , drain current (amperes) i d , drain current (amperes) (normalized) v gs (th), threshold voltage bv dss , drain-to-source breakdown r ds (on), drain-to-source on resistance i d , drain current (amperes) (normalized) voltage (normalized) apt12080b2vfr_lvfr typical performance curves 050-5840 rev a 2-200 6 0 120 240 360 480 600 0 5 10 15 20 25 02468 081 62 43 24 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 i d = 0.5 i d [cont.] v gs = 10v 3024 18 12 60 1.251.20 1.15 1.10 1.05 1.00 0.95 1.15 1.10 1.05 1.00 0.95 0.90 1.21.1 1.0 0.9 0.8 0.7 0.6 3024 18 12 60 5040 30 20 10 0 1612 84 0 3.02.5 2.0 1.5 1.0 0.5 0.0 v ds > i d (on) x r ds (on)max. 250sec. pulse test @ <0.5 % duty cycle v gs =10v v gs =20v t j = +125c t j = +25c 4.5v 4v v gs =5v, 6v, 7v, 10v & 15v 4.5v 4v v gs =5v, 6v, 7v, 10v & 15v t j = -55c normalized to v gs = 10v @ 0.5 i d [cont.] downloaded from: http:///
v ds , drain-to-source voltage (volts) v ds , drain-to-source voltage (volts) figure 10, maximum safe operating area figure 11, typical capacitance vs drain-to-source voltage q g , total gate charge (nc) v sd , source-to-drain voltage (volts) figure 12, gate charges vs gate-to-source voltage figure 13, typical source-drain diode forward voltage v gs , gate-to-source voltage (volts) i d , drain current (amperes) i dr , reverse drain current (amperes) c, capacitance (pf) apt12080b2vfr_lvfr 050-5840 rev a 2-200 6 1 5 10 50 100 500 1200 .01 .1 1 10 50 0 100 200 300 400 500 600 0 0.4 0.8 1.2 1.6 2.0 t c =+25c t j =+150c single pulse 100 5010 51 .5.1 2016 12 84 0 30,00010,000 5,0001,000 500100 100 5010 51 .5.1 operation here limited by r ds (on) t j =+150c t j =+25c v ds =600v v ds =240v v ds =120v c rss c oss c iss i d = i d [cont.] 10s1ms 10ms 100ms dc 100s 15.49 (.610)16.26 (.640) 5.38 (.212)6.20 (.244) 4.50 (.177) max. 19.81 (.780)20.32 (.800) 20.80 (.819)21.46 (.845) 1.65 (.065)2.13 (.084) 1.01 (.040)1.40 (.055) 5.45 (.215) bsc 2.87 (.113)3.12 (.123) 4.69 (.185)5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087)2.59 (.102) 0.40 (.016)0.79 (.031) drain source gate these dimensions are equal to the to-247 without the mounting hole. drain 2-plcs. 19.51 (.768)20.50 (.807) 19.81 (.780)21.39 (.842) 25.48 (1.003)26.49 (1.043) 2.29 (.090) 2.69 (.106) 0.76 (.030)1.30 (.051) 3.10 (.122) 3.48 (.137) 4.60 (.181)5.21 (.205) 1.80 (.071) 2.01 (.079) 2.59 (.102) 3.00 (.118) 0.48 (.019)0.84 (.033) drain source gate dimensions in millimeters and (inches) drain 2.29 (.090)2.69 (.106) 5.79 (.228)6.20 (.244) 2.79 (.110)3.18 (.125) 5.45 (.215) bsc 2-plcs. dimensions in millimeters and (inches) t-max tm (b2) package outline to-264 (l) package outline apts products are covered by one or more of u.s.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. us and foreign patents pending. all rights reserved. downloaded from: http:///
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